Temperature dependence and persistent conductivity of GaAs MESFETs with superlattice buffers

Author

Liou, Jenn-chorng ; Lau, Kei May

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

35

Issue

1

fYear

1988

fDate

1/1/1988 12:00:00 AM

Firstpage

14

Lastpage

17

Abstract

The DC characteristics of GaAs MESFETs with superlattice buffers were studied at room and liquid-nitrogen temperatures. It was found that the superlattice buffers provide effective screening for the active layers at room temperature and in the dark. At 77 K, however, persistent conductivity induced by ambient light or high gate bias was observed. The origin of the conductivity is presumably due to the activation of deep centers associated with the superlattice

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor superlattices; 295 K; 77 K; DC characteristics; GaAs; MESFETs; active layer screening; ambient light; deep centers; high gate bias; persistent conductivity; superlattice buffers; temperature dependence; Conductivity; Epitaxial layers; Gallium arsenide; MESFETs; MODFETs; Microwave devices; Molecular beam epitaxial growth; Substrates; Superlattices; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2410

Filename

2410