Title :
Temperature dependence and persistent conductivity of GaAs MESFETs with superlattice buffers
Author :
Liou, Jenn-chorng ; Lau, Kei May
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
The DC characteristics of GaAs MESFETs with superlattice buffers were studied at room and liquid-nitrogen temperatures. It was found that the superlattice buffers provide effective screening for the active layers at room temperature and in the dark. At 77 K, however, persistent conductivity induced by ambient light or high gate bias was observed. The origin of the conductivity is presumably due to the activation of deep centers associated with the superlattice
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor superlattices; 295 K; 77 K; DC characteristics; GaAs; MESFETs; active layer screening; ambient light; deep centers; high gate bias; persistent conductivity; superlattice buffers; temperature dependence; Conductivity; Epitaxial layers; Gallium arsenide; MESFETs; MODFETs; Microwave devices; Molecular beam epitaxial growth; Substrates; Superlattices; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
