• DocumentCode
    962369
  • Title

    Grating formation by chemical etching in AlInAs for MQW devices

  • Author

    Meneghini, G.

  • Author_Institution
    CSELT-Centro Studi e Lab. Telecom. SpA, Torino, Italy
  • Volume
    25
  • Issue
    11
  • fYear
    1989
  • fDate
    5/25/1989 12:00:00 AM
  • Firstpage
    725
  • Lastpage
    726
  • Abstract
    The chemical etching system SBW:H2O:H3PO4 (where SBW=saturated bromine water) has been used for AlInAs MBE material. This solution exhibits a diffusion-controlled reaction with low etching rate, linear dependence of the etched depth against etching time and good morphologies. With this solution a second-order grating has been made in AlInAs by means of holographic techniques.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; etching; indium compounds; optical workshop techniques; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; semiconductor technology; AlInAs; Br; DBR lasers; DFB lasers; H 2O; H 3PO 4; III-V semiconductors; MBE material; MQW devices; chemical etching; diffusion-controlled reaction; holographic techniques; saturated bromine water; second-order grating; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890491
  • Filename
    24103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962369