Title :
Grating formation by chemical etching in AlInAs for MQW devices
Author_Institution :
CSELT-Centro Studi e Lab. Telecom. SpA, Torino, Italy
fDate :
5/25/1989 12:00:00 AM
Abstract :
The chemical etching system SBW:H2O:H3PO4 (where SBW=saturated bromine water) has been used for AlInAs MBE material. This solution exhibits a diffusion-controlled reaction with low etching rate, linear dependence of the etched depth against etching time and good morphologies. With this solution a second-order grating has been made in AlInAs by means of holographic techniques.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; etching; indium compounds; optical workshop techniques; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; semiconductor technology; AlInAs; Br; DBR lasers; DFB lasers; H 2O; H 3PO 4; III-V semiconductors; MBE material; MQW devices; chemical etching; diffusion-controlled reaction; holographic techniques; saturated bromine water; second-order grating; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890491
