DocumentCode :
962393
Title :
Electron wave interference device with vertical superlattices working in large current region
Author :
Tsubaki, Keishi ; Tokura, Yasuhiro ; Fukui, T. ; Saito, Hiroshi ; Susa, N.
Author_Institution :
NTT Basic Res. Labs., Tokyo, Japan
Volume :
25
Issue :
11
fYear :
1989
fDate :
5/25/1989 12:00:00 AM
Firstpage :
728
Lastpage :
730
Abstract :
An electron wave interference device (wash board transistor), consisting of a modulation-doped Al0.3Ga0.7As/GaAs heterostructure and a 16 nm (AlAs)0.25(GaAs)0.75 vertical superlattice is fabricated. This transistor shows drain current oscillation due to electron wave interference at 4.2 K at large biasing currents. The (AlAs)0.25(GaAs)0.75 vertical superlattice improved the biasing current by about 105 times compared to the previous wash board transistor with a 500 nm tungsten grating gate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor superlattices; (AlAs) 0.25(GaAs) 0.75; 4.2 K; Al 0.3Ga 0.7As-GaAs; III-V semiconductors; W grating gate; drain current oscillation; electron wave interference device; high speed FET; large current region; modulation-doped heterostructure; vertical superlattice; vertical superlattices; wash board transistor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890493
Filename :
24105
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=962393
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