• DocumentCode
    962428
  • Title

    Properties of RF sputtered Nb3Ga superconducting films

  • Author

    Burt, R.J. ; Worzala, F.J.

  • Author_Institution
    IEEE TMAG
  • Volume
    13
  • Issue
    1
  • fYear
    1977
  • fDate
    1/1/1977 12:00:00 AM
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    Niobium-gallium films with a composition range of 8 at. % to 35 at. % Ga have been prepared using RF sputtering techniques. A variable composition sputtering target, fabricated from Nb and NbGa3powders, was used to vary the lengthwise composition as deposited on polished Al2O3substrates. The effects of deposition temperature, subsequent heat treatment, and background impurity pressure during sputtering, were studied in relation to crystalline structure, film composition, resistive Tc, and resistivity ratio. Maximum Tcvalues occur in the 30 at. % Ga region of the film when gaseous impurity levels are high, and after the films are given a 700°C vacuum anneal.
  • Keywords
    Conducting films; Sputtering; Superconducting materials; Conductivity; Crystallization; Heat treatment; Impurities; Niobium; Powders; Radio frequency; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1977.1059458
  • Filename
    1059458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962428