• DocumentCode
    962473
  • Title

    Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTs

  • Author

    Thomasian, A. ; Saunders, N.L. ; Hipwood, L.G. ; Rezazadeh, A.A.

  • Author_Institution
    GEC Hirst Res. Centre, Wembley, UK
  • Volume
    25
  • Issue
    11
  • fYear
    1989
  • fDate
    5/25/1989 12:00:00 AM
  • Firstpage
    738
  • Lastpage
    739
  • Abstract
    The observation and proposed mechanism for negative photoconductivity leading to the kink effect in the output DC characteristics of AlGaAs/GaAs HEMTs is reported. Negative photoconductivity is the result of trapping electrons at the surface, and the kink is attributed to the tunnelling of these trapped electrons back into the n-AlGaAs layer, at a constant gate-to-drain bias.
  • Keywords
    III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; photoconductivity; tunnelling; 2 DEG peak field; AlGaAs-GaAs; HEMTs; III-V semiconductors; constant gate-to-drain bias; depletion-mode devices; drain current increase; electron trapping; kink effect; n + laser; negative photoconductivity; output DC characteristics; tunnelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890499
  • Filename
    24111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962473