Title :
Mobility reduction parameters in short-channel MOSFETs
Author :
Lee, J.I. ; Lee, Matthew B. ; Kang, K.N. ; Park, K.O.
Author_Institution :
Optical Electron. Lab., Korea Adv. Inst. of Sci. & Technol., Cheongryang, Seoul, South Korea
fDate :
5/25/1989 12:00:00 AM
Abstract :
The reduction of the maximum field effect mobility in short-channel MOSFETs is attributed to the channel-length-dependent attenuation coefficient theta and the difference between the threshold voltage and the gate voltage which gives the maximum transconductance. The low field mobility mu 0 is found to be independent of the channel length.
Keywords :
carrier mobility; insulated gate field effect transistors; channel-length-dependent attenuation coefficient; gate voltage; low field mobility; maximum field effect mobility; maximum transconductance; mobility reduction parameters; short-channel MOSFETs; threshold voltage; voltage difference;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890509
