Title :
Thermal noise in gradual-junction-gate f.e.t.
Author :
Rigaud, D. ; Ginter, G. ; Lecoy, G.
Author_Institution :
Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Ã\x89lectronique des Solides, Laboratoire associé au CNRS, Montpellier, France
Abstract :
The letter gives the analytic expressions of the thermal noise existing in the channel of the epitaxial-junction gate field-effect transistor. The results are compared with Van der Ziel´s for an abrupt junction gate.
Keywords :
field effect transistors; thermal noise; epitaxial junction gate field effect transistor; impurities distributions; thermal noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710265
