Title :
Evaluation of the Schottky Barrier Parameters in the Micron-Size Metal-Semiconductor Contacts
Author :
Averin, S.V. ; Lyubchenko, V.E.
Author_Institution :
Russian Acad. of Sci., Moscow
Abstract :
We show that under certain conditions the submillimeter wave detector response of a Schottky barrier diode is a linear function of applied bias and allows evaluation of the barrier height and the near-surface doping level of semiconductor in the micron-size Schottky barrier contacts.
Keywords :
Schottky barriers; Schottky diodes; semiconductor doping; semiconductor-metal boundaries; submillimetre wave detectors; Schottky barrier diode; Schottky barrier parameters; barrier height evaluation; micronsize metal-semiconductor contacts; near-surface semiconductor doping level; submillimeter wave detector response; Capacitance; Detectors; Frequency measurement; Satellite broadcasting; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Signal analysis; Voltage; Barrier height; Schottky barriers; millimeter and submillimeter wave detectors; mixers; responsivity; semiconductor diodes;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.908054
