Title :
High-Efficiency PFC Abatement System Utilizing Plasma Decomposition and Ca(OH)
/CaO Immobilization
Author :
Suzuki, Katsumasa ; Ishihara, Yoshio ; Sakoda, Kaoru ; Shirai, Yasuyuki ; Teramoto, Akinobu ; Hirayama, Masaki ; Ohmi, Tadahiro ; Watanabe, Takayuki ; Ito, Takashi
Author_Institution :
Taiyo Nippon Sanso Corp., Tsukuba
Abstract :
In order to minimize contributions to global warming, it is important to develop a perfluorocompound (PFC) abatement system that can remove PFCs effectively with low electric power. We have developed a new PFC abatement system consisting mainly of a 2-MHz ICP plasma source and two Ca(OH)2/CaO columns operated under a decompression pressure. Reactive fluorinated compounds including SiF4 are immobilized in the Ca(OH)2/CaO columns without a water scrubber. Stable compounds such as CF4 are excited by the 2-MHz ICP plasma. When the emissions from an Si oxidation film etching process chamber were treated by this abatement system, F2 equivalent removal efficiency was 99.6%, which was about one order of magnitude larger than that of a conventional abatement system. But the CO2 equivalent removal efficiency was calculated to be 91.4% because over 95% of CO2 equivalent emissions were caused by the plasma source power consumption of 2.4 kWh. It means that minimization of the plasma source power consumption, depending on PFC emissions, is a very effective method of minimizing contributions to global warming in a manner similar to improving the PFC removal efficiency.
Keywords :
air pollution control; dissociation; electronics industry; energy conservation; etching; exhaust systems; global warming; industrial pollution; industrial waste; plasma applications; plasma chemistry; power consumption; waste reduction; CO2 equivalent removal efficiency; F2 equivalent removal efficiency; ICP plasma source; PFC abatement system; Si oxidation film etching process chamber; decompression pressure; electric power consumption; frequency 2 MHz; global warming; perfluorocompounds; productivity improvement; reactive fluorinated compounds; Atmospheric-pressure plasmas; Energy consumption; Etching; Global warming; Indium tin oxide; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Plasma stability; Abatement; calcium; plasma;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2008.2005400