• DocumentCode
    962669
  • Title

    High-Efficiency PFC Abatement System Utilizing Plasma Decomposition and Ca(OH) _{2} /CaO Immobilization

  • Author

    Suzuki, Katsumasa ; Ishihara, Yoshio ; Sakoda, Kaoru ; Shirai, Yasuyuki ; Teramoto, Akinobu ; Hirayama, Masaki ; Ohmi, Tadahiro ; Watanabe, Takayuki ; Ito, Takashi

  • Author_Institution
    Taiyo Nippon Sanso Corp., Tsukuba
  • Volume
    21
  • Issue
    4
  • fYear
    2008
  • Firstpage
    668
  • Lastpage
    675
  • Abstract
    In order to minimize contributions to global warming, it is important to develop a perfluorocompound (PFC) abatement system that can remove PFCs effectively with low electric power. We have developed a new PFC abatement system consisting mainly of a 2-MHz ICP plasma source and two Ca(OH)2/CaO columns operated under a decompression pressure. Reactive fluorinated compounds including SiF4 are immobilized in the Ca(OH)2/CaO columns without a water scrubber. Stable compounds such as CF4 are excited by the 2-MHz ICP plasma. When the emissions from an Si oxidation film etching process chamber were treated by this abatement system, F2 equivalent removal efficiency was 99.6%, which was about one order of magnitude larger than that of a conventional abatement system. But the CO2 equivalent removal efficiency was calculated to be 91.4% because over 95% of CO2 equivalent emissions were caused by the plasma source power consumption of 2.4 kWh. It means that minimization of the plasma source power consumption, depending on PFC emissions, is a very effective method of minimizing contributions to global warming in a manner similar to improving the PFC removal efficiency.
  • Keywords
    air pollution control; dissociation; electronics industry; energy conservation; etching; exhaust systems; global warming; industrial pollution; industrial waste; plasma applications; plasma chemistry; power consumption; waste reduction; CO2 equivalent removal efficiency; F2 equivalent removal efficiency; ICP plasma source; PFC abatement system; Si oxidation film etching process chamber; decompression pressure; electric power consumption; frequency 2 MHz; global warming; perfluorocompounds; productivity improvement; reactive fluorinated compounds; Atmospheric-pressure plasmas; Energy consumption; Etching; Global warming; Indium tin oxide; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Plasma stability; Abatement; calcium; plasma;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2008.2005400
  • Filename
    4657432