Fully Integrated Differential Distributed VCO in 0.35-μm SiGe BiCMOS Technology

Author

Bilionis, George P. ; Birbas, Alexios N. ; Birbas, Michael K.

Author_Institution

Dept. of Electr. Eng. & Comput. Technol., Patras Univ.

Volume

55

Issue

1

fYear

2007

Firstpage

13

Lastpage

22

Abstract

We present a fully integrated differential distributed voltage-controlled oscillator implemented in a 0.35-mum SiGe BiCMOS technology. The delay variation by a positive feedback tuning technique, adopted from the ring oscillators, is demonstrated as a fine-tuning alternative, which results to an approximately 420-MHz tuning range. The phase noise is -98 dBc/Hz at 1-MHz offset from the 14.25-GHz carrier. An integrated output buffer isolates the oscillator from the measurement equipment. The measured output power is -17.5 dBm and the overall power consumption of the chip is 138.1 mW employing two power supplies of 3.2 and 4.2 V, respectively

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; delays; logic circuits; voltage-controlled oscillators; 0.35 micron; 138.1 mW; 3.2 V; 4.2 V; BiCMOS integrated circuits; SiGe; delay variation; differential VCO; distributed VCO; distributed circuits; distributed oscillators; frequency tuning; fully integrated VCO; integrated output buffer; ring oscillators; transmission lines; voltage controlled oscillators; BiCMOS integrated circuits; Delay; Feedback; Germanium silicon alloys; Isolation technology; Ring oscillators; Semiconductor device measurement; Silicon germanium; Tuning; Voltage-controlled oscillators; Distributed circuits; SiGe BiCMOS integrated circuits; distributed oscillators; frequency tuning; output buffer; transmission lines; voltage-controlled oscillators (VCOs);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.888940

Filename

4061037