DocumentCode :
962771
Title :
Dielectric Relaxation of MIM Capacitor and Its Effect on Sigma-Delta A/D Converters
Author :
Ning, Zhenqiu ; Casier, Herman ; Maeyer, Jeroen De ; Heirman, Erik ; Vylder, Erwin De ; Noldus, Koen ; Herzeele, Geert Van ; Hegsted, Dan
Author_Institution :
ON Semicond., Oudenaarde
Volume :
21
Issue :
4
fYear :
2008
Firstpage :
549
Lastpage :
564
Abstract :
Dielectric relaxation of capacitors is one of the error sources when determining the accuracy of analog sampled-data systems that are based on charge storage. To perform an accurate characterization of the dielectric relaxation of metal-insulator-metal (MIM) capacitor, techniques based on the voltage recovery principle and the Curie Von Schweidler discharge current approach are developed. To model the dielectric relaxation of the MIM capacitor, Dow´s model is selected. An algorithm for the model parameter extraction on the Curie Von Schweidler current has been developed, which shows the phenomenon of dielectric relaxation in detail and is very fast to determine the parameters. Based on the measurement data, a set of model parameters is extracted and verified, which approximates the Curie Von Schweidler law over a sufficiently wide interval of time constants. To study the effect of the dielectric relaxation on the circuit performance of high resolution sigma-delta ADC, a 12-b incremental ADC has been selected as an example for simulation. The simulation results show that the effect of the dielectric relaxation on the performance of the 12-b ADC is not significant. We show that the .major reason for this is that the noise shaping which is enforced by the integrators in SigmaDelta-ADC is almost not affected by the dielectric relaxation phenomenon.
Keywords :
MIM devices; analogue-digital conversion; capacitors; dielectric relaxation; Curie Von Schweidler discharge current approach; MIM capacitor; analog sampled-data systems; charge storage; dielectric relaxation; metal-insulator-metal capacitor; sigma-delta A-D converters; voltage recovery principle; Circuit simulation; Data mining; Delta-sigma modulation; Dielectric measurements; Fault location; MIM capacitors; Metal-insulator structures; Parameter extraction; Time measurement; Voltage; Capacitors; converters; dielectric measurements; voltage measurement;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2008.2004339
Filename :
4657442
Link To Document :
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