Title :
A GaP MESFET for High Temperature Applications
Author :
Weichold, Mark H. ; Eknoyan, O. ; Kao, Yung-Chung
Author_Institution :
Texas A&M University, College Station, TX, USA
fDate :
12/1/1982 12:00:00 AM
Abstract :
A process for fabricating GaP metal semiconductor field effect transistors (MESFET´s) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability.
Keywords :
Schottky-barrier FETs; Conducting materials; FETs; MESFETs; Photonic band gap; Schottky barriers; Semiconductor materials; Silicon; Substrates; Temperature; Voltage;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCHMT.1982.1136001
