Title :
High-level asymptotic variation of transistor base resistance and current gain
Author :
Roulston, D.J. ; Chamberlain, S.G. ; Sehgal, J.
Author_Institution :
University of Waterloo, Electrical Engineering Department, Waterloo, Canada
Abstract :
Using a finite-section model for bipolar transistors with current-dependent base resistance and gain, high-current asymptotic variations of base resistance, gain and effective emitter width are studied, and useful analytic formulas are presented.
Keywords :
bipolar transistors; semiconductor device models; base resistance; bipolar transistors; current dependent base resistance; current gain; effective emitter; finite section model; gain; high level asymptotic variation; semiconductor device models; transistor base resistance; width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710295
