Title :
22 GHz-bandwidth 1.5 mu m compressively strained InGaAsP MQW ridge-waveguide DFB lasers
Author :
Smith, A.D. ; Baulcomb, R.S. ; Warbrick, K.J.
Abstract :
A DFB laser with a modulation bandwidth of 22 GHz together with a sidemode suppression in excess of 50 dB is reported. The wide bandwidth is achieved by using a doped SCH region which is sufficiently thick to accommodate a DFB grating, and a ridge-waveguide structure with patterned p-side metallisation to give very low parasitic capacitance. A differential gain of 25*10-16 cm2 is reported for the doped strained MQW structure used.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.5 micron; 22 GHz; InGaAsP; MQW ridge-waveguide DFB lasers; compressively strained; doped SCH region; modulation bandwidth; parasitic capacitance; patterned p-side metallisation; sidemode suppression;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931230
