Title :
F.m. noise of low-level-operating IMPATT-diode oscillators
Author_Institution :
Philips Research Laboratories, NV Philips´´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
An analytical relationship for the output-spectrum width of a low-level-operating IMPATT-diode oscillator is verified experimentally by measuring relevant diode and circuit quantities as well as the oscillator noise. Good agreement between theory and experiment is found if the spectrum width is assumed to be predominantly due to f.m. noise.
Keywords :
IMPATT devices; frequency modulation; microwave oscillators; noise; FM; IMPATT diodes; impact ionisation processes; low level operation; microwave measurements; modified Bessel functions; noise; oscillators; semiconductor avalanches; thermal generation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710302
