Title :
Infra-red AlGaAs and visible AlGaInP laser-diode stack
Author :
Bour, D.P. ; Treat, D.W. ; Beernink, K.J. ; Thornton, R.L.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
A monolithic combination of an AlGaAs laser and an AlGaInP laser is demonstrated. The two laser are grown in a stack, in a single metal organic vapour phase epitaxial growth. The two devices can be addressed individually, and exhibit good characteristics: for the AlGaAs laser, the pulsed threshold current density and efficiency are 240 A/cm2 and 26%/facet, while the respective values for the red AlGaInP laser are 260 A/cm2 and 21%/facet.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 21 percent; 26 percent; efficiency; laser-diode stack; monolithic combination; pulsed threshold current density; single metal organic vapour phase epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931235
