DocumentCode :
963151
Title :
The Y-bar switch--A single-level-masking switch
Author :
Cohen, M.S. ; Beall, G.W. ; Hsieh, W.J. ; Chang, H.
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Hgts, NY
Volume :
13
Issue :
5
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1264
Lastpage :
1266
Abstract :
The operating margins of the Y-bar switch are analyzed for both the double-level-masking (DLM) and single-level-masking (SLM) implementations. It is found that while both implementations show similar performance, two additional failure modes not seen in the DLM are found in the SLM version: 1. Bubble collapse at the base of the Y bar. 2. Bubble stripout along the conductor. Both of these failure modes are associated with magnetization reversal in the NiFe of the conductor. These failure mechanisms can be mitigated by good geometrical design and by application of an appropriate pulse sequence during operation.
Keywords :
Magnetic bubble memories; Magnetic bubble switching; Conductors; Design for manufacture; Failure analysis; Garnets; Gold; Magnetization reversal; Optical devices; Optical switches; Strips; X-ray lithography;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1977.1059525
Filename :
1059525
Link To Document :
بازگشت