Title :
Lateral capacitive probing of an anode-loaded epitaxial coplanar gallium-arsenide diode
Author :
Boccon-Gibod, D. ; Teszner, J.L.
Author_Institution :
Laboratoires d´Ã\x89lectronique et de Physique Appliquée, Limeil Brévannes, France
Abstract :
Lateral capacitive probing of epitaxial coplanar diodes shows that the results described in a previous letter are related to the creation of a moving high-field region from the cathode. When this region reaches the anode, no other moving space-charge region appears at the cathode, which should imply the existence of a stationary high-field region at the anode.
Keywords :
domains; epitaxial growth; probes; semiconductor diodes; 12.4 GHz; GaAs; domains; epitaxial coplanar diodes; high field region; impedance; lateral capacitive probing; sampling oscilloscope; semiconductor diodes; space charge distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710317
