Title :
AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates
Author :
Bardwell, J.A. ; Haffouz, S. ; Kochtane, A. ; Lester, T. ; Storey, C. ; Tang, H.
Author_Institution :
Nat. Res. Council Canada, Ottawa
Abstract :
AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of fT and fMAX of 8 and 19 GHz, respectively, were obtained from RF measurements. A 50 nm-thick SiNx passivation layer was found to be very effective in mitigating the current collapse.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; molecular beam epitaxial growth; silicon; substrates; wide band gap semiconductors; AlGaN-GaN-Si; HFET; RF measurements; Si; Si(111) substrates; SiNx passivation layer; ammonia molecular beam epitaxy; current collapse; frequency 19 GHz; frequency 8 GHz; heterostructure field effect transistors; maskless selectively grown mesas; maximum drain current; silicon substrates; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072039
