Title :
Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Author :
Song, Jong-In ; Caneau, Catherine ; Hong, Woo-Pyo
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heterojunction bipolar transistor with the same collector doping and thickness.
Keywords :
III-V semiconductors; carbon; electric breakdown of solids; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; DHBT; InGaP-GaAs:C; breakdown voltage; collector designs; current saturation characteristics; double heterojunction bipolar transistors; highly-doped n-type GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931252
