• DocumentCode
    963350
  • Title

    Current gains of AlAs/GaAs tunnelling emitter bipolar transistors with 25-500 AA barrier thickness

  • Author

    Chen, H.R. ; Lee, Charlotte P. ; Chang, C.Y. ; Tsai, K.L. ; Tsang, J.S.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1883
  • Lastpage
    1884
  • Abstract
    The current gain of an AlAs/GaAs tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 AA and and fall off for barrier thickness increasing from 200 to 500 AA. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; tunnelling; 25 to 500 AA; AlAs-GaAs; TEBT; barrier thickness; base-to-emitter hole injection; bipolar transistors; current gain; electron current suppression; tunnelling emitter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931253
  • Filename
    241399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963350