Title :
Current gains of AlAs/GaAs tunnelling emitter bipolar transistors with 25-500 AA barrier thickness
Author :
Chen, H.R. ; Lee, Charlotte P. ; Chang, C.Y. ; Tsai, K.L. ; Tsang, J.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
The current gain of an AlAs/GaAs tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 AA and and fall off for barrier thickness increasing from 200 to 500 AA. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; tunnelling; 25 to 500 AA; AlAs-GaAs; TEBT; barrier thickness; base-to-emitter hole injection; bipolar transistors; current gain; electron current suppression; tunnelling emitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931253
