• DocumentCode
    963379
  • Title

    Electron saturation velocity in Ga0.5In0.5P measured in a GaInP/GaAs/GaInP double-heterojunction bipolar transistor

  • Author

    Liu, Wenxin ; Henderson, Tim ; Beam, E.

  • Author_Institution
    Central Res. Lab., Texas Instrum., Dallas, TX, USA
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1885
  • Lastpage
    1887
  • Abstract
    The first (not necessarily typical) performance measurements on Ga0.5In0.5P/GaAs/Ga0.5In0.5P double-heterojunction bipolar transistors are reported. The measured cutoff frequency and maximum oscillation frequency are 25 and 35 GHz, respectively. From various measurements of fT under various bias conditions, the value of the electron saturation velocity in GaInP is determined to be 4.4*106 cm/s.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 25 GHz; 35 GHz; DHBT; Ga 0.5In 0.5P-GaAs-Ga 0.5In 0.5P; cutoff frequency; double-heterojunction bipolar transistor; electron saturation velocity; maximum oscillation frequency; performance measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931255
  • Filename
    241401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963379