Title :
Measurement of minority-carrier lifetime in silicon at microwave frequencies using microstrip techniques
Author :
Makios, V. ; Thomas, R.E.
Author_Institution :
Carleton University, Faculty of Engineering, Ottawa, Canada
Abstract :
A method is described for measuring minority-carrier lifetime in semiconductor samples of any thicknes and dimensions (e.g. silicon is used in device fabrication). The semiconductor sample is used as the dielectric of a microstrip line sandwitched between a ground plane of electroplated gold (or other metal) and electroplateted strip conductor delineated using standard photoresist masking techniques.
Keywords :
microwave measurement; semiconductor materials; Al; Cu; Si; direct current photoconductivity decay technique; electroplated gold; microstrip line; microwave measurements; microwave transmission; minority carrier lifetime; reflection techniques; semiconductor materials; skin depth; standard photoresist masking techniques;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710337
