Title :
Improved thermal performance of AlGaAs/GaAs HBTs by transferring the epitaxial layers to high-thermal-conductivity substrates
Author :
Sullivan, G.J. ; Hardwick, D.A. ; Higgins, J.A. ; Chang, M.F.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The authors report the improved thermal performance of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) by removal of the GaAs substrate and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2 mm) epitaxial layers have been transferred, retaining a surface flatness suitable for high resolution photolithography.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor technology; substrates; thermal resistance; AlGaAs-GaAs; AlN substrate; C substrate; TELOS; diamond substrates; epitaxial layers; heterojunction bipolar transistors; high-thermal-conductivity substrates; optimal substrates; thermal performance; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931258
