Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy

Author

Song, J.I. ; Hong, W.P. ; Palmstrom, C.J. ; Hayes, J.R. ; Chough, K.B. ; Der Gaag, B. P Van

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

29

Issue

21

fYear

1993

Firstpage

1893

Lastpage

1894

Abstract

The first high-speed operation of an InP/In_0.53Ga_0.47As heterojunction bipolar transistor (HBT) using a highly carbon-doped base is reported. A base carrier concentration of 7*10¹⁹/cm³ was achieved by chemical beam epitaxy (CBE). To the authors´ knowledge, this is the highest doping level reported using carbon. The f_T and f_max of the HBT with two 1.5*15 mu m² emitter fingers were 115 GHz and 51 GHz respectively, at I_C=60 mA and V_CE=2.0 V. These results indicate the significant potential of highly carbon-doped-base InP/InGaAs HBTs for high-speed applications.

Keywords

III-V semiconductors; carbon; carrier density; chemical beam epitaxial growth; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; 115 GHz; 2 V; 51 GHz; 60 mA; CBE; InP-In_0.53Ga_0.47As:C; base carrier concentration; chemical beam epitaxy; heterojunction bipolar transistor; high-speed operation; highly C doped base; microwave characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931260

Filename

241406