• DocumentCode
    963450
  • Title

    Saturation region model for a-Si-H TFTs using a quasi-two-dimensional approach

  • Author

    Kuo, J.B. ; Chen, S.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1896
  • Lastpage
    1897
  • Abstract
    A saturation region model for a-Si:H thin film transistors using a quasi-two-dimensional approach is reported. As verified by the published data, this analytical saturation region model provides an accurate prediction of the drain current characteristics of an a-Si:H TFT.
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device models; silicon; thin film transistors; TFT; amorphous Si:H; quasi-two-dimensional approach; saturation region model; thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931262
  • Filename
    241408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963450