Title :
GaAs 50 GHz Schottky-barrier IMPATT diodes
Author :
Watanabe, Toshio ; Kodera, Hidekazu ; Migitaka, M.
Author_Institution :
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Abstract :
Technological improvements have been made to realise high-efficiency GaAs Schottky-barrier IMPATT diodes in the 50 GHz band. Efficiency and output power have been increased by a factor of 1.5 over previous best results. Efficiency as high as 11.0% at 51 GHz and an output power of 420 mW at 53 GHz have been obtained.
Keywords :
IMPATT diodes; Schottky-barrier diodes; microwave oscillators; solid-state microwave devices; 50 GHz; IMPATT diodes; Schottky barrier diodes; gallium arsenide; microwave oscillators; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740005
