• DocumentCode
    963502
  • Title

    GaAs 50 GHz Schottky-barrier IMPATT diodes

  • Author

    Watanabe, Toshio ; Kodera, Hidekazu ; Migitaka, M.

  • Author_Institution
    Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
  • Volume
    10
  • Issue
    1
  • fYear
    1974
  • Firstpage
    7
  • Lastpage
    8
  • Abstract
    Technological improvements have been made to realise high-efficiency GaAs Schottky-barrier IMPATT diodes in the 50 GHz band. Efficiency and output power have been increased by a factor of 1.5 over previous best results. Efficiency as high as 11.0% at 51 GHz and an output power of 420 mW at 53 GHz have been obtained.
  • Keywords
    IMPATT diodes; Schottky-barrier diodes; microwave oscillators; solid-state microwave devices; 50 GHz; IMPATT diodes; Schottky barrier diodes; gallium arsenide; microwave oscillators; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740005
  • Filename
    4244955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963502