DocumentCode :
963591
Title :
2 Mbit magnetic bubble memory
Author :
Tsuboya, I. ; Saito, M. ; Hattanda, T. ; Yamaguchi, N. ; Arai, Y.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation Tokyo, Japan
Volume :
13
Issue :
5
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1360
Lastpage :
1363
Abstract :
An experimental 2 Mbit bubble memory unit containing thirty-two 64 kbit chips has been built and tested for the file memory in electronic switching systems. The memory unit has 5 ms average access time and 1.6 Mbit/sec data rate. The memory unit has been subjected to extensive functional and environmental tests for about 1 year to insure a practical file memory. Overall 8 Oe bias field margin ever the -10°C to 50°C temperature range is obtained. No resonance and no bias field margin drift were encountered under 5 to 55 cps and 5 G of vibration (G=980 cm/ sec2). Non-volatile storage at -40°C and 70°C were demonstrated. A read error rate of less than 9×10-12/read was achieved. These results insure a practical use electronic switching system file memory.
Keywords :
Magnetic bubble memories; Bonding; Circuit testing; Conductors; Electronic equipment testing; Electronic switching systems; Garnet films; Magnetic domains; Sequential analysis; Substrates; System testing;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1977.1059568
Filename :
1059568
Link To Document :
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