Title :
Comparison of noise parameters of diffused and ion-implanted microwave transistors
Author :
Ludvik, S. ; Froess, P.
Author_Institution :
Hewlett-Packard, Palo Alto, USA
Abstract :
Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6¿4.5 dB at a frequency of 4 GHz.
Keywords :
bipolar transistors; ion implantation; noise; solid-state microwave devices; 4 GHz; bipolar transistors; ion implantation; noise; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740030
