Title :
Improvement of semiconducting films for acoustoelectric amplification
Author :
Henaff, Jeannine ; Le Contellec, M.
Author_Institution :
Centre National d´Etudes des Télécommunications, Départment EST/DEF, Issy-les-Moulineaux, France
Abstract :
Experimental results for surface acoustoelectric amplification on a monolithic structure InSb/LiNbO3 are reported. Drift mobility, in a reproducible sequence of samples, has been found to be almost equal to the Hall mobility and reaches a value of up to 600 cm2/Vs.
Keywords :
acoustic surface wave devices; acoustoelectric effects; amplification; carrier mobility; indium antimonide; lithium compounds; semiconductor thin films; Hall mobility; InSb; LiNbO3; acoustic surface wave devices; amplification; carrier mobility; semiconductor thin films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740036
