• DocumentCode
    963803
  • Title

    Improvement of semiconducting films for acoustoelectric amplification

  • Author

    Henaff, Jeannine ; Le Contellec, M.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, Départment EST/DEF, Issy-les-Moulineaux, France
  • Volume
    10
  • Issue
    5
  • fYear
    1974
  • Firstpage
    49
  • Lastpage
    50
  • Abstract
    Experimental results for surface acoustoelectric amplification on a monolithic structure InSb/LiNbO3 are reported. Drift mobility, in a reproducible sequence of samples, has been found to be almost equal to the Hall mobility and reaches a value of up to 600 cm2/Vs.
  • Keywords
    acoustic surface wave devices; acoustoelectric effects; amplification; carrier mobility; indium antimonide; lithium compounds; semiconductor thin films; Hall mobility; InSb; LiNbO3; acoustic surface wave devices; amplification; carrier mobility; semiconductor thin films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740036
  • Filename
    4244990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963803