Title :
Performance of vertically coupled backside fiber-optic interconnections to GaAs
Author :
Fossum, Eric R. ; Tischler, M.A.
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. A vertical coupling technique suited for dense fiber-optic interconnection of two-dimensional device arrays in GaAs has recently been developed. It uses cavities etched in the backside of the wafer to align each fiber to a diaphragm photodetector (DPD) fabricated on the front-surface epitaxial layers. Operation of the fiber-pigtailed DPDs is described. Enhanced optoelectronic performance due to the backside approach as well as the capability of addressing interconnect arrays with approximately 10 fibers/mm2 is reported.
Keywords :
III-V semiconductors; fibre optics; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical interconnections; backside illumination; capability of addressing interconnect arrays; dense fiber-optic interconnection; diaphragm photodetector; epitaxial layers; fiber-pigtailed DPDs; optoelectronic performance; two-dimensional device arrays; vertical coupling technique; vertically coupled backside fiber-optic interconnections; Epitaxial layers; Etching; FETs; Gallium arsenide; Lighting; MOSFETs; Optical coupling; Optical fiber devices; Optical interconnections; Optical reflection; Photoconductivity; Photodetectors; Schottky diodes; Shadow mapping;
Journal_Title :
Electron Devices, IEEE Transactions on
