Title :
Switching in thin polycrystalline films of CoO and CoO(Li)
Author :
Lalevic, B. ; Fuschillo, N. ; Wang, W. ; Kuliyeg, B.
Author_Institution :
Rutgers University, Department of Electrical Engineering, New Brunswick, USA
Abstract :
Switching from the high- to the low-resistance state has been studied in thin polycrystalline films of CoO and CoO(Li). The sum of the delay ¿d and switching time ¿s is 0.01 ¿s and the recovery time is ¿r is 0.1 ¿S. The threshold field for switching is 4.6×105 V/cm for undoped CoO, which is reduced to 9.3×103 V/cm in Li-doped films. The conduction mechanism of these films is determined.
Keywords :
cobalt compounds; electrical conductivity transitions; insulating thin films; semiconductor thin films; switching; CoO; CoO(Li) cobalt compounds; electrical conductivity transitions; switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740050
