Title :
Computer modelling of low-noise indium-phosphide amplifiers
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Computer modelling shows how the use of a cathode contact that restricts the amount of space charge injected into the bulk material can improve the noise performance of a transferred-electron amplifier. An example of an n+-p-n-n+ InP amplifier with a predicted noise measure of 4dB at 17 GHz is presented.
Keywords :
electronics applications of computers; microwave amplifiers; semiconductor device models; solid-state microwave devices; transferred electron devices; 17 GHz; InP; bulk effect devices; electronics applications of computers; indium compounds; microwave amplifiers; solid state microwave devices; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740057
