• DocumentCode
    964322
  • Title

    Electron dynamics in short-channel InP field-effect transistors

  • Author

    Maloney, Timothy J. ; Frey, Jesse

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    10
  • Issue
    7
  • fYear
    1974
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    The transient response of electrons to a high field in InP has been calculated by a Monte Carlo method. The results are compared with previously published results for GaAs, and used to indicate the performance that may be obtained in InP and GaAs microwave f.e.t.s.
  • Keywords
    III-V semiconductors; Monte Carlo methods; carrier mobility; field effect transistors; high-frequency effects; indium compounds; solid-state microwave devices; transient response; GaAs; Monte Carlo method; carrier mobility; field effect transistors; high field effects; indium compounds; solid state microwave devices; transient response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740089
  • Filename
    4245045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964322