Title :
Numerical analysis of electric field inside mesa p+-n-n+ avalanche diodes
Author :
Costea, I. ; Dascalu, D.
Author_Institution :
Polytechnical Institute of Bucharest, Department of Electronics & Telecommunications, Bucharest, Romania
Abstract :
Preliminary results of a numerical 2-dimensional analysis of the electric field and the space-charge region in silicon mesa p+-n-n+ diodes designed for avalanche transit-time operation are reported. It is shown that, for certain values of the bevel angles at the p+-n junction and the n-n+ interface, the electric field below the semiconductor surface exceeds the maximum field in the bulk material.
Keywords :
avalanche diodes; electric fields; electronics applications of computers; space charge; transit time devices; Si; avalanche diodes; computer aided analysis; electric fields; numerical analysis; space charge; transit-time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740099
