• DocumentCode
    964420
  • Title

    Numerical analysis of electric field inside mesa p+-n-n+ avalanche diodes

  • Author

    Costea, I. ; Dascalu, D.

  • Author_Institution
    Polytechnical Institute of Bucharest, Department of Electronics & Telecommunications, Bucharest, Romania
  • Volume
    10
  • Issue
    8
  • fYear
    1974
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    Preliminary results of a numerical 2-dimensional analysis of the electric field and the space-charge region in silicon mesa p+-n-n+ diodes designed for avalanche transit-time operation are reported. It is shown that, for certain values of the bevel angles at the p+-n junction and the n-n+ interface, the electric field below the semiconductor surface exceeds the maximum field in the bulk material.
  • Keywords
    avalanche diodes; electric fields; electronics applications of computers; space charge; transit time devices; Si; avalanche diodes; computer aided analysis; electric fields; numerical analysis; space charge; transit-time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740099
  • Filename
    4245056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964420