Degradation Mechanism in Si-Doped Al/Si Contacts and an Extremely Stable Metallization System

Author

Mori, Masamichi ; Kanamori, Shuichi ; Ueki, Takemi

Author_Institution

Nippon Telegraph and Telephone Public Corp, Tokyo, Japan

Volume

6

Issue

2

fYear

1983

fDate

6/1/1983 12:00:00 AM

Firstpage

159

Lastpage

162

Abstract

The resistance increase of diffused resistors with Si-doped Ai metallization was investigated under high current density. This degradation was caused by void formation at the Si-doped Al/Si interface. The resistance increase of the diffused resistor corresponded to the resistor length expanded by this void formation. The void formation resulted from a combination of Al and Si electromigration and diffusion of Si into the Al layer. This mechanism was confirmed by analyses of Cu-doped AI, which had excellent resistance to Al electromigration, and the AI/TiN/Ti metallization system, which should have a complete barrier effect against Si diffusion into Al. Based on these degradation analyses, an extremely stable Cu-doped Ai/TiN/Ti metallization system has been proposed for high current density applications..

Keywords

Integrated circuit metallization; Integrated circuit reliability; Thin-film resistors; Artificial intelligence; Current density; Degradation; Electric resistance; Metallization; Nitrogen; Radio frequency; Resistors; Sputtering; Tin;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/TCHMT.1983.1136163

Filename

1136163