• DocumentCode
    964587
  • Title

    Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations

  • Author

    Schemmert, W. ; Zimmer, G.

  • Author_Institution
    Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
  • Volume
    10
  • Issue
    9
  • fYear
    1974
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.
  • Keywords
    field effect transistors; ion implantation; sensitivity; FET; MOS; ion implantation; threshold voltage sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740115
  • Filename
    4245073
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964587