Title :
C.W. operation of ion-implanted GaAs read-type IMPATT diodes
Author :
Berenz, J.J. ; Ying, R.S. ; Lee, D.H.
Author_Institution :
Hughes Research Laboratories, Torrance, USA
Abstract :
Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.
Keywords :
IMPATT diodes; microwave oscillators; solid-state microwave devices; 11 GHz; GaAs; IMPATT diodes; Read type diode; microwave oscillators; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740119
