• DocumentCode
    964632
  • Title

    C.W. operation of ion-implanted GaAs read-type IMPATT diodes

  • Author

    Berenz, J.J. ; Ying, R.S. ; Lee, D.H.

  • Author_Institution
    Hughes Research Laboratories, Torrance, USA
  • Volume
    10
  • Issue
    9
  • fYear
    1974
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.
  • Keywords
    IMPATT diodes; microwave oscillators; solid-state microwave devices; 11 GHz; GaAs; IMPATT diodes; Read type diode; microwave oscillators; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740119
  • Filename
    4245077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964632