DocumentCode
964707
Title
Low-voltage punchthrough injection structure
Author
Delagebeaudeuf, D.
Author_Institution
Thomson-CSF, LCR, Orsay, France
Volume
10
Issue
10
fYear
1974
Firstpage
166
Lastpage
167
Abstract
Some new results for low-voltage low-current BARITT oscillators are presented. It is shown that an X band oscillator operating with an applied power as low as 0.1 W and an efficiency near 1% is quite feasible.
Keywords
avalanche diodes; microwave oscillators; solid-state microwave circuits; transit time devices; BARITT oscillators; X-band; avalanche diodes; low voltage punch through injection structure; microwave oscillators; solid state microwave circuits; transit time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740126
Filename
4245085
Link To Document