Title :
Operation of 6 GHz f.e.t. amplifier at reduced ambient temperature
Author_Institution :
RCA Ltd., Ste. Anne de Bellevue, Canada
Abstract :
An m.i.c. f.e.t. amplifier was tested at ambient temperatures varying, from 20 to ¿85°C. A gain increase of 3 dB and noise figure decrease of 1.9 dB were measured over that temperature range.
Keywords :
field effect transistors; hybrid integrated circuits; microwave amplifiers; solid-state microwave circuits; 6GHz; field effect transistors; hybrid integrated circuits; microwave amplifiers; solidstate microwave circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740139
