• DocumentCode
    964898
  • Title

    Electron-beam fabricated high-speed digital GaAs integrated circuits

  • Author

    Greiling, Paul T. ; Lee, Robert E. ; Ozdemir, Faik S. ; Schmitz, Adele E.

  • Author_Institution
    Hughes Research Laboratory, Malibu, CA
  • Volume
    70
  • Issue
    1
  • fYear
    1982
  • Firstpage
    52
  • Lastpage
    59
  • Abstract
    The fabrication and performance of high-speed GaAs logic circuits incorporating submicrometer gate length FET´s fabricated by electron-beam lithography are discussed. The process technology required for realizing 0.5-µm gate length devices is detailed. High-speed results including a 10-GHz logic gate, 34-ps gate delay for a ring oscillator, and a 4-GHz flip-flop are described.
  • Keywords
    Digital integrated circuits; FETs; Fabrication; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; Lithography; Logic circuits; Logic devices; Logic gates;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1982.12230
  • Filename
    1456498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964898