DocumentCode :
964898
Title :
Electron-beam fabricated high-speed digital GaAs integrated circuits
Author :
Greiling, Paul T. ; Lee, Robert E. ; Ozdemir, Faik S. ; Schmitz, Adele E.
Author_Institution :
Hughes Research Laboratory, Malibu, CA
Volume :
70
Issue :
1
fYear :
1982
Firstpage :
52
Lastpage :
59
Abstract :
The fabrication and performance of high-speed GaAs logic circuits incorporating submicrometer gate length FET´s fabricated by electron-beam lithography are discussed. The process technology required for realizing 0.5-µm gate length devices is detailed. High-speed results including a 10-GHz logic gate, 34-ps gate delay for a ring oscillator, and a 4-GHz flip-flop are described.
Keywords :
Digital integrated circuits; FETs; Fabrication; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; Lithography; Logic circuits; Logic devices; Logic gates;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1982.12230
Filename :
1456498
Link To Document :
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