• DocumentCode
    964930
  • Title

    BARITT-diode large-signal performance

  • Author

    Stewart, J.A.C.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
  • Volume
    10
  • Issue
    10
  • fYear
    1974
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    p+-n-p+ BARITT diodes have produced maximum output powers of the order of 100 mW. A large-signal computer simulation is used to evaluate the device conductance as a function of the r.f. voltage amplitude, and hence the output power. It is concluded that, to. obtain optimum output power, (a) the n-region doping density should be increased and (b) the chip series resistance should be minimised.
  • Keywords
    avalanche diodes; electronics applications of computers; semiconductor device models; simulation; transit time devices; BARITT diodes; avalanche diodes; computer simulation; conductance; large signal analysis; transit time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740147
  • Filename
    4245106
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964930