Title :
BARITT-diode large-signal performance
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
p+-n-p+ BARITT diodes have produced maximum output powers of the order of 100 mW. A large-signal computer simulation is used to evaluate the device conductance as a function of the r.f. voltage amplitude, and hence the output power. It is concluded that, to. obtain optimum output power, (a) the n-region doping density should be increased and (b) the chip series resistance should be minimised.
Keywords :
avalanche diodes; electronics applications of computers; semiconductor device models; simulation; transit time devices; BARITT diodes; avalanche diodes; computer simulation; conductance; large signal analysis; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740147
