Title :
Buried-channel c.c.d. models based on a 1-dimensional analysis
Author :
El-Sissi, H. ; Cobbold, R.S.C.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
Based on a simplified 1-dimensional analysis, some physically orientated models of buried-channel c.c.d.s are derived and discussed. For devices with either a constant or stepped oxide, these models lead to a simple expression for the charge-carrying capacity. Further, it is pointed out that the models could form the basis of models that account for dynamic-transfer phenomena.
Keywords :
charge-coupled devices; semiconductor device models; charge coupled devices; one dimensional analysis; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740150
