DocumentCode
965032
Title
Structured Copper: A Pliable High Conductance Material for Bonding to Silicon Power Devices
Author
Glascock, Homer H., II ; Webster, Harold F.
Author_Institution
General Electric Company, Schenectady, NY, USA
Volume
6
Issue
4
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
460
Lastpage
466
Abstract
The large difference in thermal expansion between silicon and the high conductivity metals is a major problem to be solved in the packaging of high power silicon devices. One solution is by the use of structured copper which is made of many separate copper wires and can he directly attached to silicon without introducing large stresses. Methods of preparing structured copper are presented along with some examples of its application.
Keywords
Copper; Power semiconductor devices; Semiconductor device bonding; Silicon materials/devices; Bonding forces; Conducting materials; Copper; Packaging; Silicon; Temperature dependence; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stresses;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1983.1136213
Filename
1136213
Link To Document