• DocumentCode
    965032
  • Title

    Structured Copper: A Pliable High Conductance Material for Bonding to Silicon Power Devices

  • Author

    Glascock, Homer H., II ; Webster, Harold F.

  • Author_Institution
    General Electric Company, Schenectady, NY, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    460
  • Lastpage
    466
  • Abstract
    The large difference in thermal expansion between silicon and the high conductivity metals is a major problem to be solved in the packaging of high power silicon devices. One solution is by the use of structured copper which is made of many separate copper wires and can he directly attached to silicon without introducing large stresses. Methods of preparing structured copper are presented along with some examples of its application.
  • Keywords
    Copper; Power semiconductor devices; Semiconductor device bonding; Silicon materials/devices; Bonding forces; Conducting materials; Copper; Packaging; Silicon; Temperature dependence; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1983.1136213
  • Filename
    1136213