• DocumentCode
    965245
  • Title

    The properties of X-bar bubble memory chips

  • Author

    Metzdorf, Werner ; Lill, A. ; Navratil, F. ; Parzefall, Franz

  • Author_Institution
    Siemens AG, Components Division, Germany
  • Volume
    14
  • Issue
    2
  • fYear
    1978
  • fDate
    3/1/1978 12:00:00 AM
  • Firstpage
    50
  • Lastpage
    55
  • Abstract
    The properties of a 16-kbit bubble memory chip having a conventional major-minor loop organization are described. The chip can be operated up to a shift rate of 300 kHz which corresponds to a mean access time of 0.5 ms to blocks of 128 bits. Overall bias field margins of 13 percent were obtained, especially as the result of an appropriately selected layout of the transfer gates which is described in detail. Additional data are given concerning the influence of ambient temperature and of the number of propagation steps. The possibility of fabricating X-bar transfer gates using a single photomask step is demonstrated.
  • Keywords
    Magnetic bubble memories; Bars; Conductive films; Conductors; Data processing; Demagnetization; Garnet films; Gold; Resists; Sputter etching; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1978.1059725
  • Filename
    1059725