DocumentCode :
965245
Title :
The properties of X-bar bubble memory chips
Author :
Metzdorf, Werner ; Lill, A. ; Navratil, F. ; Parzefall, Franz
Author_Institution :
Siemens AG, Components Division, Germany
Volume :
14
Issue :
2
fYear :
1978
fDate :
3/1/1978 12:00:00 AM
Firstpage :
50
Lastpage :
55
Abstract :
The properties of a 16-kbit bubble memory chip having a conventional major-minor loop organization are described. The chip can be operated up to a shift rate of 300 kHz which corresponds to a mean access time of 0.5 ms to blocks of 128 bits. Overall bias field margins of 13 percent were obtained, especially as the result of an appropriately selected layout of the transfer gates which is described in detail. Additional data are given concerning the influence of ambient temperature and of the number of propagation steps. The possibility of fabricating X-bar transfer gates using a single photomask step is demonstrated.
Keywords :
Magnetic bubble memories; Bars; Conductive films; Conductors; Data processing; Demagnetization; Garnet films; Gold; Resists; Sputter etching; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1978.1059725
Filename :
1059725
Link To Document :
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