DocumentCode
965245
Title
The properties of X-bar bubble memory chips
Author
Metzdorf, Werner ; Lill, A. ; Navratil, F. ; Parzefall, Franz
Author_Institution
Siemens AG, Components Division, Germany
Volume
14
Issue
2
fYear
1978
fDate
3/1/1978 12:00:00 AM
Firstpage
50
Lastpage
55
Abstract
The properties of a 16-kbit bubble memory chip having a conventional major-minor loop organization are described. The chip can be operated up to a shift rate of 300 kHz which corresponds to a mean access time of 0.5 ms to blocks of 128 bits. Overall bias field margins of 13 percent were obtained, especially as the result of an appropriately selected layout of the transfer gates which is described in detail. Additional data are given concerning the influence of ambient temperature and of the number of propagation steps. The possibility of fabricating X-bar transfer gates using a single photomask step is demonstrated.
Keywords
Magnetic bubble memories; Bars; Conductive films; Conductors; Data processing; Demagnetization; Garnet films; Gold; Resists; Sputter etching; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1978.1059725
Filename
1059725
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