• DocumentCode
    965273
  • Title

    Overlength modes of InP transferred-electron devices

  • Author

    Jones, D. ; Rees, H.D.

  • Author_Institution
    Royal Radar Establishment, Great Malvern, UK
  • Volume
    10
  • Issue
    12
  • fYear
    1974
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    Simulations of overlength modes in InP transferred-electron devices indicate microwave conversion efficiencies greater than 25%. The maximum frequency of operation exceeds 20 GHz. but depends markedly on the nature of the electronic intervalley scattering processes and associated relaxation effects.
  • Keywords
    microwave oscillators; semiconductor device models; simulation; solid-state microwave devices; transferred electron devices; InP transferred electron devices; electronic intervalley scattering processes; maximum frequency; microwave conversion efficiencies; microwave oscillators; overlength modes; relaxation effects; semiconductor device models; simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740181
  • Filename
    4245142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965273