Title :
High-performance undoped InP/n-In0.53Ga0.47As MSM photodetectors grown by LP-MOVPE
Author :
Shi, Chang-Xin ; Grützmacher, Detlev ; Stollenwerk, Manfred ; Wang, Qing-Kang ; Heime, Klaus
Author_Institution :
Inst. of Microelectron. Technol., Shanghai Jiao Tong Univ., China
fDate :
5/1/1992 12:00:00 AM
Abstract :
A new high-performance undoped In0.53Ga0.47As metal-semiconductor-metal photodetector (MSM-PD) with an undoped InP barrier-enhancement layer is reported. The layers were grown by the low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) technique. The main features of this device include: a very low dark current of less than 60 nA, (100×100) μm2, at 1.5 V; a short risetime of 30 ps at 6 V; and a high responsivity of 0.42 A/W for λ=1.3 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optoelectronic devices; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; 1.5 V; 100 micron; 30 ps; 6 V; 60 nA; InP-In0.53Ga0.47As; LP-MOVPE; MSM photodetectors; barrier-enhancement layer; dark current; features; low pressure MOVPE; metal-semiconductor-metal photodetector; metalorganic vapor-phase epitaxy; responsivity; risetime; semiconductors; Absorption; Dark current; Doping; Electrodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photodetectors;
Journal_Title :
Electron Devices, IEEE Transactions on
