Title :
Determination of device structure from GaAs/AlGaAs HEMT DC I -V characteristic curves
Author :
Mahon, Simon J. ; Skellern, David J.
Author_Institution :
Macquarie Univ., Sydney, NSW, Australia
fDate :
5/1/1992 12:00:00 AM
Abstract :
A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC I-V characteristic is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity, in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Al fraction; GaAs-AlGaAs; HEMT; HEMT structure; I-V characteristic; device structure determination; dopant density; doped layer thickness; drain resistance; experimental results; inverse modeling; models; physical gate length; saturated electron velocity; semiconductors; source resistance; spacer layer thickness; Aluminum; Circuits; Electrical resistance measurement; Electrons; Gallium arsenide; HEMTs; Inverse problems; Length measurement; Numerical analysis; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
