Title :
High-frequency simulation of semiconductor alloy ramp heterostructures
Author :
Tait, Gregory B. ; Westgate, Charles R.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
A small-signal AC transport description is formulated to characterize the high-frequency operation of unipolar semiconductor heterostructures. The physical transport model combines diffusion-drift currents through compositionally graded regions with a thermionic-emission current imposed at an abrupt material interface. This sinusoidal steady-state analysis can be employed to determine the dynamic terminal admittance of devices at microwave frequencies and cryogenic temperatures. AlxGa1-xAs alloy ramp heterostructures have been fabricated by molecular beam epitaxy and tested over wide ranges of temperature, DC bias, and frequency. Experimentally measured microwave admittances compare favorably with simulated results at room and liquid-nitrogen temperatures and are used to verify the theoretical approach
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor device models; semiconductor diodes; semiconductor epitaxial layers; solid-state microwave devices; 77 K; AlxGa1-xAs; DC bias; abrupt material interface; barrier diodes; compositionally graded regions; cryogenic temperatures; diffusion-drift currents; dynamic terminal admittance; high-frequency operation; microwave admittances; microwave frequencies; molecular beam epitaxy; physical transport model; room temperature; semiconductor alloy ramp heterostructures; semiconductors; small-signal AC transport description; temperature; thermionic-emission current; unipolar semiconductor heterostructures; Admittance; Aluminum alloys; Composite materials; Cryogenics; Gallium alloys; Microwave frequencies; Molecular beam epitaxial growth; Semiconductor materials; Steady-state; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
