Title :
Effects of degradation-induced absorption in GaAs-d.h.s. laser diodes
Author :
Schicketanz, D. ; Wittmann, J. ; Zeidler, G.
Author_Institution :
Siemens AG, Forschungslaboratorien, Mÿnchen, West Germany
Abstract :
The absorbing lines observed in degraded GaAs-d.h.s. laser diodes cause increased local heating and higher threshold values. Since absorption is partly saturable by strong optical signals, the transient behaviour resembles that of passive Q-switched lasers.
Keywords :
semiconductor lasers; GaAs double heterostructure laser diodes; degradation induced absorption; local heating; threshold values; transient behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740199
